GERMANIUM SECRETS

Germanium Secrets

≤ 0.fifteen) is epitaxially developed on a SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which you can the construction is cycled as a result of oxidizing and annealing stages. A result of the preferential oxidation of Si over Ge [68], the original Si1–With greater efficiency as a result of the upper absorption of germ

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